Samsung begins mass production of 9th-gen NAND with 50% upped bit density

Samsung has launched a model new vertical NAND (V-NAND) with one of the best bit density however.

The South Korean tech giant talked about on Tuesday that it has begun mass manufacturing of its ninth-generation V-NAND this month which may “set the sample for the high-performance, high-density solid-state drive (SSD) market that meets the needs for the approaching AI period,”

The 1-Terabit (Tb) triple-level cell (TLC) V-NAND has its bit density elevated by as a lot as 50% as compared with its eighth-generation predecessor that launched in 2022. This was achieved by the chip being made with the smallest cell measurement and the thinnest mildew to this point, Samsung talked about.

It moreover has a double-stack building, the place there are two stacks of vertically layered cells in its place of 1. Samsung talked about it utilized channel hole etching on these stacks, the place a niche is punched by the layered cells to kind electron pathways, a feat that’s more durable the additional layers there are.

The company talked about it moreover eradicated dummy channel holes to chop again the ground area of cells and utilized utilized sciences to chop again cell interference and lengthen cell life.

The ninth-generation V-NAND moreover has the latest NAND interface Toggle 5.1 utilized, which allows it to have an info enter/output tempo of as a lot as 3.2Gbps, a 33% improve from its predecessor, Samsung talked about, whereas vitality consumption has moreover been lowered by 10%.

It moreover helps PCIe 5.0 interface, which has double the bandwidth of PCIe 4.0 at 32GT/s, which Samsung talked about it’s going to use to cement its administration inside the high-performance SSD market.

Whereas the TLC model is already in manufacturing, Samsung will start mass manufacturing of the quad-level cell (QLC) model, the place a cell can retailer 4 bits of data, inside the second half of the 12 months.